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NTMD4184PF
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Maximum Instantaneous
V F
I F = 1.0 A
T J = 25 ° C
0.43
0.50
V
Forward Voltage
I F = 2.0 A
T J = 125 ° C
T J = 25 ° C
T J = 125 ° C
0.35
0.5
0.45
0.39
0.58
0.53
Maximum Instantaneous
I R
V R = 10 V
T J = 25 ° C
0.001
0.02
mA
Reverse Current
V R = 20 V
T J = 125 ° C
T J = 25 ° C
T J = 125 ° C
1.2
0.004
2.0
14
0.05
18
3. Pulse Test: pulse width v 300 m s, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
TYPICAL CHARACTERISTICS
10
8
5.0 V
10 V
V GS = 4.5 V
T J = 25 ° C
4.2 V
4.0 V
10
8
V DS ≥ 10 V
3.8 V
6
4
3.6 V
3.4 V
3.2 V
6
4
2
0
3.0 V
2.8 V
2.6 V
2
0
T J = 125 ° C
T J = 25 ° C
T J = -55 ° C
0
2
4
6
8
10
0
1
2
3
4
5
6
0.30
V DS , DRAIN-TO-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
0.25
V GS , GATE-TO-SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
0.25
0.20
ID = 3 A
T J = 25 ° C
0.20
0.15
T J = 25 ° C
V GS = 4.5 V
0.15
0.10
0.10
V GS = 10 V
0.05
0.05
2
4
6
8
10
2
3
4
5
6
7
8
9
V GS , GATE-TO-SOURCE VOLTAGE (V)
Figure 3. On-Resistance vs. Gate Voltage
I D , DRAIN CURRENT (A)
Figure 4. On-Resistance vs. Drain Current and
Gate Voltage
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